 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| GP400DDS12 GP400DDS12 Powerline N-Channel Dual Switch IGBT Module DS5341-1.1 February 2000 The GP400DDS12 is a dual switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry. Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. The powerline range of high power modules includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands. Typical applications include dc motor drives, ac pwm drives, main traction drives and auxiliaries, large ups systems and resonant inverters. 7 8 VCES VCE(sat) IC IC(PK) KEY PARAMETERS 1200V (typ) 2.7V (max) 400A (max) 800A 5 6 3 1 9 12 11 10 4 2 Outline type code: D FEATURES s s s s s s s (See package details for further information) Fig. 1 Electrical connections - (not to scale) 12(C2) 2(C2) 4(E2) 1(E1) 7(C ) 1 n - Channel Enhancement Mode High Input Impedance Optimised For High Power High Frequency Operation Isolated Base Full 1200V Capability 400A Per Arm 11(G2) 10(E2) 3(C1) 5(E1) 6(G1) Fig.2 Dual switch circuit diagram APPLICATIONS s s s s ORDERING INFORMATION Order As: GP400DDS12 Note: When ordering, please use the whole part number. High Power Switching Motor Control Inverters Traction Systems Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 GP400DDS12 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Tcase = 25C unless stated otherwise. Symbol VCES VGES IC Parameter Collector-emitter voltage Gate-emitter voltage Collector current DC, Tcase = 25C DC, Tcase = 75C IC(PK) Pmax Visol Maximum power dissipation Isolation voltage 1ms, Tcase = 75C Tcase = 25C (Transistor) Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 1200 20 600 400 800 3750 2500 Units V V A A A W V THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(j-c) Rth(c-h) Tj Parameter Thermal resistance - transistor (per arm) Thermal resistance - diode (per arm) Thermal resistance - Case to heatsink (per module) Junction temperature Conditions DC junction to case DC junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 - Min. -40 - Max. Units 35 70 8 150 125 125 5 2 10 o C/kW C/kW o o C/kW o C C o o C Nm Nm Nm Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 2/10 GP400DDS12 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(SAT) IF IFM VF Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 120mA, VGE = VCE VGE = 15V, IC = 400A VGE = 15V, IC = 400A, Tcase = 125C Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 400A IF = 400A, Tcase = 125C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4 Typ. 2.7 3.2 2.5 2.4 45 20 Max. 1 50 4 7.5 3.5 4.0 400 800 3.0 2.9 Units mA mA A V V V A A V V nF nH Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10 GP400DDS12 INDUCTIVE SWITCHING CHARACTERISTICS For definition of switching waveforms, refer to figure 3 and 4. Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse recovery charge Conditions Min. - Typ. 1100 150 130 800 320 90 30 170 Max. 1300 200 170 900 400 Units ns ns mJ ns ns mJ C C IC = 400A VGE = 15V VCE = 600V RG(ON) = RG(OFF) = 3.3 L ~ 100nH - 130 50 - IF = 400A VR = 50%VCES, dIF/dt = 2000A/s - Tcase = 125C unless stated otherwise. td(off) tf EOFF td(on) tr EON Qrr Qrr Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse recovery charge IC = 400A VGE = 15V VCE = 600V RG(ON) = RG(OFF) = 3.3 L ~ 100nH IF = 400A VR = 50%VCES, dIF/dt = 2000A/s - 1300 200 170 950 350 150 50 225 1500 250 250 1200 450 200 70 - ns ns mJ ns ns mJ C C Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 4/10 GP400DDS12 SWITCHING DEFINITIONS +15V 10% 0V -15V t4 + 5s Vge Eon = V t1 ce c .I dt IC 90% td(on) = t2 - t1 tr = t3 - t2 10% Vce t1 t2 t3 t4 Fig.3 Definition of turn-on switching times +15V 90% 0V -15V t7 + 5s Vge Eoff = V t5 ce c .I dt 90% td(off) = t6 - t5 10% tf = t7 - t6 IC Vce t5 t6 t7 Fig.4 Definition of turn-off switching times Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10 GP400DDS12 CURVES Vge = 20/15/12/10V 800 700 600 Collector current, IC - (A) Vge = 20/15/12/10V 800 Common emitter Tcase = 125C Common emitter Tcase = 25C 700 600 Collector current, IC - (A) 500 400 300 200 100 0 0 500 400 300 200 100 0 0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 5.0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 5.0 Fig.5 Typical output characteristics Fig.6 Typical output characteristics 80 70 60 110 Conditions: Tcase = 25C, VCE = 600V, VGE = 15V 100 A 90 Turn-on energy, Eon - (mJ) 80 70 60 50 40 30 20 Conditions: Tcase = 125C, VCE = 600V, VGE = 15V A Turn-on energy, Eon - (mJ) B C B 50 40 30 20 10 0 0 50 100 150 200 250 300 Collector current, IC - (A) 350 400 A : Rg = 15 B : Rg = 10 C : Rg = 5 C 10 0 0 50 100 A : Rg = 15 B : Rg = 10 C : Rg = 5 150 200 250 300 Collector current, IC - (A) 350 400 Fig.7 Typical turn-on energy vs collector current Fig.8 Typical turn-on energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 6/10 GP400DDS12 90 80 70 Conditions: Tcase = 25C, VCE = 600V, VGE = 15V 125 Conditions: Tcase = 125C, VCE = 600V, VGE = 15V A B 75 C A B 100 Turn-off energy, Eoff - (mJ) 60 50 40 30 20 10 0 A : Rg = 15 B : Rg = 10 C : Rg = 5 100 200 300 400 500 600 Collector current, IC - (A) 700 800 C Turn-off energy, Eoff - (mJ) 50 25 A : Rg = 15 B : Rg = 10 C : Rg = 5 0 0 50 100 150 200 250 300 Collector current, IC - (A) 350 400 0 Fig.9 Typical turn-off energy vs collector current Fig.10 Typical turn-off energy vs collector current 35 30 Diode turn-off energy, Eoff(Diode) - (mJ) Conditions: VCE = 600V, VGE = 15V, Rg = 5 2000 Tcase = 125C 1800 1600 Switching times, ts - (ns) td(off) tf Conditions: Tcase = 125C, VCE = 600V VGE = 15V Rg = 5 25 1400 1200 1000 800 600 400 20 15 Tcase = 25C td(on) 10 5 200 tr 0 0 100 200 300 Collector current, IC (A) 400 0 0 50 100 150 200 250 300 Collector currrent, IC - (A) 350 400 Fig.11 Typical diode reverse recovery charge vs collector current Fig.12 Typical switching characteristics Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10 GP400DDS12 800 700 600 Tj = 25C 500 400 300 200 Tj = 125C Collector current, IC - (A) Forward current, IF - (A) 1000 900 800 700 600 500 400 300 200 Tcase = 125C Vge = 15V Rg = 5* *Recommended minimum value 200 1000 600 400 800 Collector-emitter voltage, Vce - (V) 1200 100 100 0 0 0.5 1 1.5 2 2.5 Forward voltage, VF - (V) 3 3.5 0 0 Fig.13 Diode typical forward characteristics Fig.14 Reverse bias safe operating area 10000 100 Transient thermal impedance, Zth (j-c) - (C/kW ) Diode Transistor IC max. (single pulse) 1000 50 Collector current, IC - (A) s 10 = 1m tp IC m ax .D 10 s 0 s 100 C on (c tin uo ) us 1 10 1 1 10 100 1000 Collector-emitter voltage, Vce - (V) 10000 0.1 1 10 100 Pulse width, tp - (ms) 1000 10000 Fig.15 Forward bias safe operating area Fig.16 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 8/10 GP400DDS12 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 62 15 15 62 13 5 24 3 1 16 7 8 9 4 2 18 12 13 26 11 10 14 11.5 35 20 4x M8 6x O7 6x M4 38 28 5 140 Nominal weight: 1600g Module outline type code: D ASSOCIATED PUBLICATIONS Title Electrostatic handling precautions An introduction to IGBTs IGBT ratings and characteristics Heatsink requirements for IGBT modules Calculating the junction temperature of power semiconductors Gate drive considerations to maximise IGBT efficiency Parallel operation of IGBTs - punch through vs non-punch through characteristics Guidance notes for formulating technical enquiries Principle of rating parallel connected IGBT modules Short circuit withstand capability in IGBTs Driving high power IGBTs with concept gate drivers Application Note Number AN4502 AN4503 AN4504 AN4505 AN4506 AN4507 AN4508 AN4869 AN5000 AN5167 AN5190 9/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 31.5 43.3 57 65 11.85 57 65 6 GP400DDS12 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). HEATSINKS Power Assembly has it's own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2000 Publication No. DS5341-1 Issue No. 1.1 February 2000 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 10/10 |
Price & Availability of GP400DDS12
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |